Methods for forming lateral trench optical detectors

US6451702B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Min Yang · Yorktown Heights, US
• Kern Rim · Yorktown Heights, US

Key dates

• Filing date: Feb 16, 2001
• Grant date: Sep 17, 2002
• Expiry date: Feb 16, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A method for forming an optical detector device on a semiconductor substrate. The method includes forming a first set and a second set of trenches in the substrate, wherein trenches of the first set are alternately disposed with respect to trenches of the second set, filling the trenches with a sacrificial material, and etching the sacrificial material from the first set of trenches. The method further includes filling the first set of trenches with a doped material of a first conductivity, etching the sacrificial material from a second set of trenches, filling the second set of trenches with a doped material of a second conductivity, forming a first junction layer by driving dopants from the doped material in each of the first set of trenches and forming a second junction layer by driving dopants from the doped material in each of the second set of trenches, and providing separate wiring connections to the first set of trenches and the second set of trenches. The first and second set of trenches are formed simultaneously.