Inventor · Yorktown Heights, NY, US

Min Yang

76Patents
17h-index
80Co-inventors
83Inventor score

Filing activity: Feb 16, 2001 → Jan 20, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US7459752B2 Ultra thin body fully-depleted SOI MOSFETs Electricity 274 Active
US7250658B2 Hybrid planar and FinFET CMOS devices Electricity 156 Expired
US7605429B2 Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement Electricity 122 Expired
US7125785B2 Mixed orientation and mixed material semiconductor-on-insulator wafer Electricity 85 Expired
US7329923B2 High-performance CMOS devices on hybrid crystal oriented substrates Electricity 85 Expired
US7087965B2 Strained silicon CMOS on hybrid crystal orientations Electricity 84 Expired
US7098508B2 Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations Electricity 81 Expired
US7023055B2 CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding Electricity 79 Expired
US6667528B2 Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same Emerging Cross-Sectional Technologies 69 Expired
US6815278B1 Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations Electricity 67 Expired
US7291886B2 Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs Electricity 65 Expired
US6830962B1 Self-aligned SOI with different crystal orientation using wafer bonding and SIMOX processes Electricity 63 Expired
US6911383B2 Hybrid planar and finFET CMOS devices Electricity 62 Expired
US8633067B2 Fabricating photonics devices fully integrated into a CMOS manufacturing process Electricity 44 Active
US6451702B1 Methods for forming lateral trench optical detectors Emerging Cross-Sectional Technologies 38 Expired
US7091069B2 Ultra thin body fully-depleted SOI MOSFETs Electricity 21 Expired
US6946696B2 Self-aligned isolation double-gate FET Electricity 18 Expired
US6707075B1 Method for fabricating avalanche trench photodetectors Emerging Cross-Sectional Technologies 17 Expired
US7629233B2 Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement Electricity 16 Active
US7791057B2 Memory cell having a buried phase change region and method for fabricating the same Physics 16 Active
US7439542B2 Hybrid orientation CMOS with partial insulation process Electricity 14 Expired
US9034748B2 Process variability tolerant hard mask for replacement metal gate finFET devices Emerging Cross-Sectional Technologies 12 Active
US7023057B2 CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding Electricity 12 Expired
US7268377B2 Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devices Emerging Cross-Sectional Technologies 12 Expired
US7485506B2 Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETS Electricity 11 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.