Method of removing reaction product due to plasma ashing of a resist pattern
US6451707B2 · kind B2 · utility
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4References
14Claims
0Family size
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Key dates
| Filing date | Dec 5, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Dec 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming a processed film onto the underlying film formed on the substrate, the processed film is dry etched using a mask pattern so as to form an etched pattern. After the reaction product deposited on a wall of the etched pattern is removed by using the first cleaning solution having relatively low power to etch the processed film and the second cleaning solution having relatively high power to etch the processed film in that order, the etched pattern or its vicinity is rinsed with water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.