SEMICONDUCTOR DEVICE HAVING FIRST, SECOND AND THIRD NON-CRYSTALLINE FILMS SEQUENTIALLY FORMED ON INSULATING BASE WITH SECOND FILM HAVING THERMAL CONDUCTIVITY NOT LOWER THAN THAT OF FIRST FILM AND NOT HIGHER THAN THAT OF THIRD FILM, AND METHOD OF MANUFACTURING THE SAME
US6452213B1 · kind B1 · utility
20Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Oct 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
Abstract
A first thin film is formed on one surface of an insulating base, and a second thin film having a thermal conductivity higher than the first thin film is formed on the first thin film. An amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film. The amorphous semiconductor thin film is changed to a polycrystalline semiconductor thin film through laser annealing. The provision of the second thin film results in larger and uniform crystal grain diameters and less proturberances in the polycrystalline semiconductor thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.