Silicon carbide semiconductor device
US6452228B1 · kind B1 · utility
26Cited by
17References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Aug 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1×1015 cm−3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produced in the gate oxide film and at the interface between the gate oxide film and the surface channel layer becomes extremely small. As a result, carrier traps are prevented from being produced by silicon nitride, resulting in stable FET characteristics and high reliability to the gate oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.