High voltage mosgated device with trenches to reduce on-resistance
US6452230B1 · kind B1 · utility
150Cited by
7References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 23, 1999 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Dec 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
Abstract
Parallel, spaced SIPOS (semi-insulating polysilicon) filled trenches extend vertically through the epi layer of a MOSgated device and act to deplete carriers from the vertical conduction volume of the epi between trenches during voltage blocking conditions. Thus, a higher conductivity epi can be used to reduce the RDSON (Drain to Source ON resistance) of the device for a given break down voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.