Increased damping of magnetization in magnetic materials
US6452240B1 · kind B1 · utility
11Cited by
10References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Oct 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In order to dampen magnetization changes in magnetic devices, such as tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.