Inductor with patterned ground shield
US6452249B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Oct 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having an inductor is provided. In an RF circuit portion (RP), a region in an SOI layer (3) corresponding to a region in which a spiral inductor (SI) is provided is divided into a plurality of SOI regions (21) by a plurality of trench isolation oxide films (11). The trench isolation oxide films (11) are formed by filling trenches extending from the surface of the SOI layer (3) to the surface of a buried oxide film (2) with a silicon oxide film, and completely electrically isolate the SOI regions (21) from each other. The trench isolation oxide films (11) have a predetermined width and are shaped to extend substantially perpendicularly to the surface of the buried oxide film (2). The semiconductor device is capable of reducing electrostatically induced power dissipation and electromagnetically induced power dissipation, and preventing the structure and manufacturing steps thereof from becoming complicated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.