Ultra thin, single phase, diffusion barrier for metal conductors
US6452276B1 · kind B1 · utility
20Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1998 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Apr 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.