Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6453457B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Techniques for fabricating a device include forming a fabrication layout such as a mask layout, for a physical design layer, such as a design for an integrated circuit, and identifying evaluation points on an edge of a polygon corresponding to the design layer for correcting proximity effects. Included are techniques that correct for proximity effects associated with an edge in a layout corresponding to a design layer. An evaluation point is determined for the edge based on a profile of amplitudes output from a proximity effects model along a transect. The transect includes a target edge in the design layer corresponding to the edge. It is then determined how to correct at least a portion of the edge for proximity effects based on an analysis at the evaluation point. In other techniques, a dissection length parameter is derived based on a profile of amplitudes output by a proximity effects model along a transect. The transect includes a second edge in a second layout. An evaluation point is determined for a first edge based on the dissection length parameter. Then it is determined how to correct at least a portion of the first edge based on an analysis at the evaluation point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.