Magnetron sputtering source
US6454920B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2001 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Jun 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3325
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.