Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US6455340B1 · kind B1 · utility
172Cited by
6References
15Claims
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Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Dec 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphire substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphire substrate removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.