Eeprom tunnel window for program injection via P+ contacted inversion
US6455375B1 · kind B1 · utility
1Cited by
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19Claims
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Key dates
| Filing date | Jun 1, 2001 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Jun 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
An improved method for fabricating a tunnel oxide window for use in an EEPROM memory cell is provided so as to produce better programming endurance. A P+ implant is provided at the tunnel window edge. During the programming operation, the P+ contacted inversion layer is used instead of the program junction. As a result, there is eliminated the voltage drop in the program junction region so as to improve the efficiency of programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.