Patent · US Expired

Method of fabricating silicon structures including fixtures for supporting wafers

US6455395B1 · kind B1 · utility

18Cited by
23References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 2000
Grant dateSep 24, 2002
Priority date
Expiry dateSep 20, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67316
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of fabricating the parts and assembling them into a complex structure, such as a silicon tower or boat for removably supporting a plurality of silicon wafers during thermal processing. A preferred embodiment of the tower includes four legs secured on their ends to two bases. A plurality of slots are cut in the legs allowing slidable insertion of the wafers and support for them. The legs preferably have a rounded wedge shape with a curved front surface of small radius cut with the slots and a back surface that is either flat or curved with a substantially larger radius. Preferably, the legs are machined from virgin polysilicon formed by chemical vapor deposition from silane. The bases may be either virgin poly or monocrystalline silicon and be either integral or composed of multiple parts. Virgin polysilicon is preferably annealed to above 1025° C. before machining. Silicon parts may be joined by applying a spin-on glass between the parts and annealing the assembly. After assembly, the surface of a tower is subjected to sub-surface working.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.