Silicone polymer insulation film on semiconductor substrate and method for forming the film
US6455445B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Mar 28, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has —SiR2O— repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;, &bgr;, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.