Silicon carbide semiconductor device and method for manufacturing the same
US6455892B1 · kind B1 · utility
129Cited by
4References
10Claims
0Family size
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Key dates
| Filing date | Sep 15, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Sep 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
In an accumulation mode MOSFET, a surface channel layer is disposed on a p− type base region between an n+ type source region and an n− type epi layer. The surface channel layer is composed of an n type channel layer formed on the p− type base region and a p type channel layer formed on the n type channel layer. A gate insulating film is formed on the p type channel layer. A channel is formed in the n type channel layer. Accordingly, channel mobility can be improved and on-resistance can be reduced without being affected by a state of an interface between the gate insulating film and the surface channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.