Method of metal oxide thin film cleaning
US6457479B1 · kind B1 · utility
57Cited by
9References
1Claims
0Family size
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Key dates
| Filing date | Sep 26, 2001 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Sep 26, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200° C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.