Process for preparing single crystal silicon having uniform thermal history
US6458202B1 · kind B1 · utility
10Cited by
7References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 19, 2000 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Jun 19, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1028
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history. In the process, the power supplied to the side heater is maintained substantially constant throughout the growth of the main body and end-cone of the ingot, while power supplied to a bottom heater is gradually increased during the growth of the second half of the main body and the end-cone. The present process enables an ingot to be obtained which yields wafers having fewer light point defects in excess of about 0.2 microns, while having improved gate oxide integrity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.