Plasma processing apparatus
US6458239B1 · kind B1 · utility
13Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1998 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Sep 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plurality of antennae generate a plasma in the chamber containing a workpiece, and the relative outputs of the antennae are varied as a detector detects a property or parameter of the resultant plasma or process. The relative outputs of the antennae are controlled in accordance with the property or parameter detected. The detector, which detects the property or parameter at or near the workpiece location, is a Langmuir probe which is shielded from the plasma by a semiconductor or insulating layer and is driven.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.