Antifuse for use with low k dielectric foam insulators
US6458630B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1999 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Oct 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fusible link for a semiconductor device comprises an insulating substrate and a conductive line pair on the surface of the insulating substrate, with the conductive line pair having spaced ends. A polymer is disposed over the insulating substrate and between the conductive line pair ends. The polymer is capable of being changed from a non-conductive to a conductive state upon exposure to an energy beam. Preferably, the polymer comprises a polyimide, more preferably, a polymer/onium salt mixture, most preferably, a polyaniline polymer doped with a triphenylsufonium salt. The link may further comprise a low k nanopore/nanofoam dielectric material adjacent the conductive line ends.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.