Window for light emitting diode

US6459098B1 · kind B1 · utility

Assignee

• AXT, INC. · US

Inventors

• John Chen · Walnut, US
• Bingwen Liang · Sunnyvale, US
• Robert Shih · Hsinchu, TW

Key dates

• Filing date: Jul 26, 2000
• Grant date: Oct 1, 2002
• Expiry date: Jul 26, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titaniumgold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.