Wavelength-tunable semiconductor laser diode
US6459709B1 · kind B1 · utility
26Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2001 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Apr 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3416
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A wavelength-tunable distributed feedback (DFB) laser is disclosed where the lasing wavelength can be adjusted by adjusting the bias current of the laser diode. Since the output power of the laser diode also changes with the bias current, a one-to-one correspondence between the lasing wavelength and the output power of the laser can be established. Consequently, the lasing wavelength can be measured directly from the photocurrent of a power monitoring detector facing the back-end of the laser diode. This provides an extremely simple method for wavelength monitoring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.