Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
US6460482B1 · kind B1 · utility
336Cited by
3References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Nov 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas shower unit has a function of preliminary heating reactant gas to be passed therethrough, and is thus capable of causing uniform reaction within a semiconductor manufacturing apparatus and preventing through hole clogging and particle generation. The gas shower unit has a base material of 5 mm or less in thickness and includes a sintered aluminum nitride base material having a plurality of through holes and a heater circuit pattern or a plasma upper electrode as a conductive layer formed in the sintered aluminum nitride base material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.