Method and apparatus for controlling rise and fall of temperature in semiconductor substrates
US6461428B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 5, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Dec 5, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.