Thin dielectric films for DRAM storage capacitors
US6461931B1 · kind B1 · utility
72Cited by
12References
46Claims
0Family size
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Key dates
| Filing date | Aug 29, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Sep 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming multiple dielectric layers at low temperatures include forming a number of metallic layers on a substrate and oxidizing the metallic layers to different dielectric oxides. Oxidation is performed one layer at a time, or all layers together. Dielectric layers thus formed have multiple different oxides in layers, reducing defects, providing high capacitance, and low leakage currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.