Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6461972B1 · kind B1 · utility
35Cited by
3References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dual plasma process generates a microwave neutral plasma remote from a semiconductor wafer and a radio frequency (RF) ionized plasma adjacent to the wafer for simultaneous application to the wafer. A first gas flows through a microwave plasma generation area, without a second gas in the gas flow, to generate the neutral microwave plasma. The second gas is added to the gas flow downstream of the microwave plasma generation area prior to an RF plasma generation area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.