Alex Kabansky
7Patents
5h-index
8Co-inventors
52Inventor score
Filing activity: Apr 5, 2000 → Jul 15, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6461972B1 | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow | Electricity | 35 | Expired |
| US6346490B1 | Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps | Electricity | 29 | Expired |
| US6641698B2 | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow | Electricity | 18 | Expired |
| US6346488B1 | Process to provide enhanced resistance to cracking and to further reduce the dielectric constant of a low dielectric constant dielectric film of an integrated circuit structure by implantation with hydrogen ions | Electricity | 18 | Expired |
| US7351663B1 | Removing whisker defects | Electricity | 7 | Expired |
| US7997288B2 | Single phase proximity head having a controlled meniscus for treating a substrate | Emerging Cross-Sectional Technologies | 4 | Active |
| US8313580B2 | Method for processing a substrate using a single phase proximity head having a controlled meniscus | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.