Cleaning agent for a semiconductor device and a method of manufacturing a semiconductor device
US6462005B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 5, 1995 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Jan 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.