Plasma processing system for sputter deposition applications
US6462482B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Nov 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system for sputter deposition application is configured by a reactor including two parallel capacitively-coupled electrodes called upper and lower electrodes, and a multi-pole magnet arrangement over the outer region of the upper electrode. The magnets are assembled on a metal ring in order to rotate over the upper electrode. The target plate is fixed to the upper electrode which is given only a high-frequency rf current, or high-frequency rf current and a DC voltage together. The lower electrode where the substrate is placed, is given a MF, HF or VHF rf current in order to generate a negative self bias voltage on the lower electrode to extract ionized sputtered-atoms that fill contact-holes on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.