Semiconductor device and method for manufacturing the same
US6462723B1 · kind B1 · utility
157Cited by
10References
58Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1999 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Jun 11, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/043
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device having TFTs whose thresholds can be controlled.There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed on a substrate, wherein an arbitrary voltage is applied to the back gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.