High-dielectric constant capacitor and memory
US6462931B1 · kind B1 · utility
48Cited by
6References
1Claims
0Family size
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Key dates
| Filing date | Oct 23, 1997 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Oct 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A capacitor (100) with a high dielectric constant oxide dielectric (102) plus Ir- or Ir and Rh bond over the oxygen site in Barium strontium titanate (BST) dielectric to achieve the high Schottky barrier, and very thin layers of Ir or Rh with conductive oxide backing layers (106, 116) provide oxygen depletion deterrence. Rh-containing capacitor plates (104, 114) yielding high Schottky barrier interfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.