Shaoping Tang
18Patents
6h-index
30Co-inventors
66Inventor score
Filing activity: Mar 18, 1997 → Apr 21, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6930007B2 | Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance | Emerging Cross-Sectional Technologies | 173 | Expired |
| US6462931B1 | High-dielectric constant capacitor and memory | Electricity | 48 | Expired |
| US7045436B2 | Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI) | Electricity | 9 | Expired |
| US7736983B2 | High threshold NMOS source-drain formation with As, P and C to reduce damage | Electricity | 7 | Active |
| US6794730B2 | High performance PNP bipolar device fully compatible with CMOS process | Electricity | 7 | Expired |
| US5830532A | Method to produce ultrathin porous silicon-oxide layer | Electricity | 6 | Expired |
| US6855984B1 | Process to reduce gate edge drain leakage in semiconductor devices | Electricity | 5 | Expired |
| US8530298B2 | Radiation hardened integrated circuit | Electricity | 4 | Active |
| US7216310B2 | Design method and system for optimum performance in integrated circuits that use power management | Physics | 3 | Expired |
| US7795085B2 | Intentional pocket shadowing to compensate for the effects of cross-diffusion in SRAMs | Electricity | 2 | Active |
| US9608109B1 | N-channel demos device | Electricity | 2 | Active |
| US7601575B2 | Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7691700B2 | Multi-stage implant to improve device characteristics | Electricity | 1 | Active |
| US6933203B2 | Methods for improving well to well isolation | Electricity | 0 | Expired |
| US9202912B2 | Low cost demos transistor with improved CHC immunity | Electricity | 0 | Active |
| US7662690B2 | Method of preparing a semiconductor substrate utilizing plural implants under an isolation region to isolate adjacent wells | Electricity | 0 | Active |
| US9773793B2 | Transistor performance modification with stressor structures | Electricity | 0 | Active |
| US9577094B2 | Low cost demos transistor with improved CHC immunity | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.