Sputtering target
US6464847B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Feb 20, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3407
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a sputtering target characterized in that a part of the direction or the tangential direction of grinding the top surface or the both surfaces of the target is parallel to, or within an angle range of ±45 degrees to the warping direction of the target after bonding the target to the backing plate; and when the target is rectangular, the present invention relates to a sputtering target characterized in that the target is rectangular, and a part of the direction or the tangential direction of grinding the top surface or the both surfaces of the target is within a range of angles of the warping direction after bonding the target to the backing plate to the diagonal of the target. There is provided a sputtering target that can effectively decrease and prevent cracking due to difference in the coefficient of thermal expansion, and effectively decrease or prevent similar cracking during sputtering, especially in the manufacturing process of a ceramic target, that is in the process for bonding the target to the backing plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.