Method for patterning high density field emitter tips
US6464890B2 · kind B2 · utility
16Cited by
10References
47Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Aug 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern in a layer of material on a substrate, comprising providing a plurality of spheres, covering the layer on the substrate with the plurality of spheres to form a mask, reducing the diameter of at least one sphere of the plurality of spheres, etching the layer on the substrate using at least one sphere having a reduced diameter as a mask, and etching the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.