Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone
US6465044B1 · kind B1 · utility
14Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Apr 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of depositing silicon oxide films on the surface of semiconductor substrates, and more particularly to depositing such films by chemical vapor deposition using alkylsiloxane oligomers precursors with ozone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.