Semiconductor device having a ferroelectric capacitor and method for the manufacture thereof
US6465260B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jul 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a transistor formed on the semiconductor substrate, an isolation region for isolating the transistor and an insulating layer formed on top of the transistor and the isolation region; and a capacitor structure, formed on top of the insulating layer, composed of a bottom electrode, a capacitor thin film placed on top of the bottom electrode and a top electrode formed on top of the capacitor thin film, wherein the capacitor thin film is made of Nb doped lead zirconate titanate (PNZT). In the device, the PNZT is formed by using a sol-gel coating solution is represented by a formula Pb(1−x/2)Pbx(Zr0.52Ti0.48)(1−x)O3, where x is equal to 0˜0.05 assuming that Nb compensates charges generated by Pb vacancies. The semiconductor device can lower leakage current approximately 2 order by adding Nb dopants to the PZT. Further, the present invention is capable of forming the capacitance thin film on the bottom electrode at a low temperature by spin coating the PNZT coating solution in the form of sol-gel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.