Process for producing a semiconductor device

US6465270B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Alfred Lell · Maxhütte-Haidhof, DE

Key dates

• Filing date: Apr 10, 2001
• Grant date: Oct 15, 2002
• Expiry date: Apr 10, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/305
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor device includes an electrically conductive III-V doped semiconductor substrate of a first conduction type, a photodiode array having photodiode structures disposed on the III-V doped semiconductor substrate, a first III-V doped semiconductor layer of a second conduction type disposed between the photodiode structures and the III-V doped semiconductor substrate, etching trenches disposed on the III-V doped semiconductor substrate, each of the trenches having inner sides, the inner sides having an insulation layer and a metallization layer for electrically connecting the photodiode structures in series, the metallization layer disposed on the insulation layer; and partition lines separating each of the photodiode structures from others of the photodiode structures for producing an individual photodiode structure when the array is cut through the first III-V doped semiconductor layer along the partition lines.