Method of making ZnSe based light emitting device with in layer using vibration and pressure
US6465273B1 · kind B1 · utility
1Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | May 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
Abstract
A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is melted on the electrode body, the ZnSe substrate is placed directly on the melted In or In alloy and then subjected to at least one of vibration and pressure to achieve a good bond and ohmic contact between the In or In alloy and the ZnSe substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.