Method of fabricating monolithic multifunction integrated circuit devices

US6465289B1 · kind B1 · utility

Assignee

• TRW Limited · US

Inventors

• Dwight C. Streit · Henry's Drive, US
• Donald K. Umemoto · Manhattan Beach, US
• Aaron K. Oki · Torrance, US
• Kevin Wesley Kobayashi · Torrance, US

Key dates

• Filing date: Jul 1, 1996
• Grant date: Oct 15, 2002
• Expiry date: Jul 1, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/05

Abstract

A method of selective molecular beam epitaxy for fabricating monolithically integrated circuit devices on a common substrate including combinations of PIN diode devices, HBT devices, HEMT devices and MESFET devices. The method includes depositing a profile layer of one of the devices on an appropriate substrate and then depositing a first dielectric layer over the profile layer. The profile layer and the dielectric layer are then etched to define a first device profile. A second profile layer for defining a second device is then deposited over the exposed substrate. The second profile is then selectively etched to define a second device profile. This process can be extended to more than two different device types monolithically integrated on a common substrate as long as the first developed devices are robust enough to handle the temperature cycling involved with developing the subsequent devices.