Method of manufacturing a semiconductor device using a polymer film pattern
US6465290B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Mar 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0217
Abstract
Claimed and disclosed is a method of manufacturing a semiconductor device, the method comprising the steps of forming a dummy gate on a semiconductor substrate, forming a source-drain diffusion region by introducing an impurity into the semiconductor substrate having the dummy gate as a mask, removing the dummy gate to form an opening, and forming a gate electrode within the opening with a gate insulating film formed below the gate electrode. The dummy gate is further formed by coating the semiconductor substrate with a polymer having a higher carbon content than hydrogen content so as to form a polymer film, forming a photoresist pattern on the polymer film, and transferring the pattern shape of the photoresist pattern onto the polymer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.