Kouji Matsuo
69Patents
14h-index
71Co-inventors
87Inventor score
Filing activity: Mar 31, 1987 → Sep 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6737716B1 | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 349 | Expired |
| US6310367A | MOS transistor having a tensile-strained SI layer and a compressive-strained SI-GE layer | Electricity | 139 | Expired |
| US6376888B1 | Semiconductor device and method of manufacturing the same | Electricity | 83 | Expired |
| US6465290B1 | Method of manufacturing a semiconductor device using a polymer film pattern | Electricity | 65 | Expired |
| US6346438B1 | Method of manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 53 | Expired |
| US6977415B2 | Semiconductor device including a gate insulating film on a recess and source and drain extension regions | Electricity | 48 | Expired |
| US7652328B2 | Semiconductor device and method of manufacturing the same | Electricity | 29 | Active |
| US10211166B2 | Semiconductor device and method of manufacturing the same | Electricity | 27 | Active |
| US7579231B2 | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 25 | Expired |
| US6737309B2 | Complementary MISFET | Electricity | 20 | Expired |
| US6887747B2 | Method of forming a MISFET having a schottky junctioned silicide | Electricity | 20 | Expired |
| US6815279B2 | Manufacturing method of CMOS devices | Electricity | 19 | Expired |
| US7340942B2 | Sensor including a sensor element having electrode terminals spaced apart from a connecting end thereof | Physics | 17 | Expired |
| US7179569B2 | Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6964893B2 | Semiconductor device and method of fabricating the same | Electricity | 14 | Expired |
| US8633535B2 | Nonvolatile semiconductor memory | Electricity | 12 | Active |
| US6770402B2 | Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6833596B2 | Semiconductor device and method of manufacturing the same | Electricity | 10 | Expired |
| US7745073B2 | Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same | Emerging Cross-Sectional Technologies | 9 | Active |
| US8138552B2 | Semiconductor device and method of manufacturing the same | Electricity | 9 | Active |
| US7461538B2 | Sensor and method of producing sensor | Physics | 8 | Expired |
| US10319730B2 | Memory device having a plurality of first conductive pillars penetrating through a stacked film | Electricity | 8 | Active |
| US9793293B1 | Semiconductor device and method for manufacturing same | Electricity | 8 | Active |
| US7459246B2 | Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same | Emerging Cross-Sectional Technologies | 8 | Active |
| US6548023B1 | Gas sensor | Physics | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.