Method of manufacturing a flash memory device
US6465302B1 · kind B1 · utility
2Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Apr 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
There is disclosed a method of manufacturing a flash memory device. In order to solve the problems that expensive photograph equipments are required and the manufacturing costs are thus increased when defining a floating gate and a control gate in a flash memory cell used in a high-integration flash memory device, the present invention performs an etching process for defining a floating gate with an-isotropic etching process. Therefore, it can minimize the areas of a cell and thus obtain a high-integration device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.