Process for producing a bipolar transistor with self-aligned emitter and extrinsic base

US6465317B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventor

• Michel Marty · Buc, FR

Key dates

• Filing date: Jan 19, 2001
• Grant date: Oct 15, 2002
• Expiry date: Mar 22, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/021

Abstract

A transistor manufacturing process includes the formation, on a layer (15) that will form the base of the transistor, of a stack of an SiGe alloy layer (16), a silicon oxide layer (17) and a silicon nitride layer (18), so as to form in this layer, a false emitter (20), to form, in the layer (15) that will form the base, an extrinsic base region (22) and to siliconize the surface of this extrinsic base region, to cover the extrinsic base region (22) and the false emitter (20) with a silicon dioxide layer (24) which is chemically and mechanically polished down to the level of the false emitter (20), to etch the false emitter (20) in order to form a window (25) and to form, in the window (25) and on the silicon dioxide layer (24), a polysilicon emitter (27). This process has particular application to manufacturing heterojunction bipolar transistors.