Method for removing dry-etching residue in a semiconductor device fabricating process
US6465352B1 · kind B1 · utility
19Cited by
5References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 12, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jun 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device fabricating process, a copper-based metal film is formed on an insulating layer, and an insulating film is formed on the copper-based metal film. A patterned resist film is formed on the insulating film, and the insulating film is dry-etched using the patterned resist film as a mask to form a hole penetrating through the insulating film. Thereafter, a plasma treatment using an non-oxidizing gas is carried out, and furthermore, a wet treatment using a resist remover liquid is carried out, for removing the resist film and a resist surface hardened layer which was generated in the dry-etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.