Method for stabilizing semiconductor degas temperature
US6465369B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jan 21, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/541
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for stabilizing a degas temperature of wafers in a degas chamber comprises (a) setting an electrical heater at an initial output power, (b) heating each wafer for a first period of time to keep the temperature of the wafer at a predetermined range by setting the electrical heater at a first output power equal to or higher than the initial output power, (c) heating the wafer for a second period of time to increase the temperature of the wafer to a predetermined value by raising the output power of the electrical heater to a second output power; and (d) heating the wafer for a third period of time by reducing the output power of the electrical heater to a third output power. The method lessens the “first wafer effect” and the “temperature-accumulated effect”. Therefore, the temperature of the wafers can be well controlled before a subsequent sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.