Method for manufacturing zirconium oxide film for use in semiconductor device
US6465371B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 20, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jun 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02189
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD) which begins with setting a wafer in a reaction chamber. Thereafter, a zirconium source material of Zr(OC(CH3)3)4 (zirconium tetra-tert-butoxide) is supplied into the reaction chamber and then, an unreacted Zr(OC(CH3)3)4 is removed by a N2 purge or a vacuum purge. Subsequently, an oxygen source material is supplied into the reaction chamber, wherein the oxygen source material is selected from the group consisting of vaporized water (H2O), O2 gas, N2O gas and O3 gas. Finally, an unreacted oxygen source material is purged out from the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.