Dynamic threshold voltage metal insulator semiconductor effect transistor
US6465823B1 · kind B1 · utility
15Cited by
3References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/901
Abstract
In a semiconductor device in which the gate electrode of a MISFET formed on a semiconductor substrate is electrically connected to a well region under the channel of the MISFET, the MISFET is formed in an island-shaped element region formed on the semiconductor substrate, and electrical connection between the gate electrode of the MISFET and the well region in the semiconductor substrate is done on the side surface of the island-shaped element region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.