RF voltage controlled capacitor on thick-film SOI
US6465830B2 · kind B2 · utility
12Cited by
14References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | May 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A voltage controlled capacitor sandwiched between a buried oxide and a shallow trench insulator to form a near ideal P+ to n-well diode with minimal parasitic capacitance and resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.