Patent · US Expired

RF voltage controlled capacitor on thick-film SOI

US6465830B2 · kind B2 · utility

12Cited by
14References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 21, 2001
Grant dateOct 15, 2002
Priority date
Expiry dateMay 21, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/201

Abstract

A voltage controlled capacitor sandwiched between a buried oxide and a shallow trench insulator to form a near ideal P+ to n-well diode with minimal parasitic capacitance and resistance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.