Semiconductor integrated circuit device having trench-type photodiode
US6465846B1 · kind B1 · utility
23Cited by
3References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 22, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Mar 22, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A semiconductor integrated circuit device has a semiconductor substrate having an SOI region and a bulk region. A buried insulating layer is formed only in the SOI region of the semiconductor substrate. A diode-type photosensor is formed in the bulk region of the semiconductor substrate and is comprised of a trench and a diffusion layer disposed over side surfaces and a lower surface of the trench. A MOS transistor is formed in the SOI region of the semiconductor substrate for processing a signal from the diode-type photosensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.