Gain and bandwidth enhancement for RF power amplifier package
US6466094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jan 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/49175
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Gain and bandwidth enhancement of a RF power amplifier package is effected by electrically coupling a power transistor to a RF signal source with an inductance, and further electrically coupling the input and common element terminals of the power transistor with a shunt inductance. The shunt inductance is chosen such that its reactance is the conjugate of the reactance of the power transistor's common-input capacitance. A similar conjugate matching output circuit is provided to electrically couple the transistor's output and common element terminals to a load. The shunt inductors are implemented on the package substrate by connecting the respective input and output transistor terminals to grounded shunt caps via bond wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.